ace 234 1 b p - channel enhancement mode field effect transistor ver 1. 2 1 d escription the ACE2341B uses advanced trench technology to provide excellent r ds(on) , low gate ch arge and operation gate voltages as low as 1.8v. this device is suitable for use as a load switch or other general applications. features ? v ds = - 2 0v , i d = - 4 .1a ? r ds (on) < 6 5 m @ v gs = - 4.5 v ? r ds(on) < 85 m @ v gs = - 2.5 v ? r ds(on) < 125 m @ v gs = - 1.8 v absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds - 2 0 v gate - source voltage v gs 12 v drain current (continuous) t a =25 o c i d - 4 .1 a t a =70 o c - 3.2 drain current (pulse) i dm - 30 a power dissipation t a =25 o c p d 1.4 w operating and storage temperature range t j , t stg - 55 to 150 o c packaging type sot - 23 - 3 l d 3 1 2 g s ordering i nformation ace 2341 b x x + h sot - 23 - 3 l description 1 gate 2 source 3 drain bm : sot - 23 - 3 l pb - free halogen - free
ace 23 4 1 b p - channel enhancement mode field effect transistor ver 1. 2 2 electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit s t a t e drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 2 0 v zero gate voltage drain current i dss v ds = - 16 v, v gs =0v - 1 ua gate leakage current i gss v gs = 1 2 v, v ds =0v 10 0 na static drain - source on - resistance r ds(on) v gs = - 4.5v, i d = - 4 . 3 a 5 5 6 5 m v gs = - 2 .5v, i d = - 2 . 5 a 7 0 8 5 v gs = - 1.8 v, i d = - 2 a 1 1 2 1 2 5 gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 0 . 6 - 0 . 8 1 - 1 . 4 v forward transconductance g fs v ds = - 5v, i d = - 4 a 1 5 s drain forward voltage v sd i s = - 1 .7 a,v gs =0v - 0.8 5 - 1 v switching total gate charge q g v ds = - 10v, i d = - 4 . 5 a v gs = - 4.5v 8 . 9 2 1 1 . 6 nc gate - source charge q gs 1 . 8 2 . 3 4 gate - drain charge q gd 2 . 0 4 2 . 6 5 turn - on delay time t d(on) v d s = - 10 v,r l = 1 0 i d = - 1 a, r gen = 6 v g s = - 4 . 5 v 1 6 . 0 8 3 2 . 1 6 ns turn - on rise time t f 5 . 2 8 1 0 . 5 6 turn - off delay time t d(off) 3 7 . 6 7 5 . 2 turn - off fall time t f 7 . 2 8 1 4 . 5 dynamic input capacitance c iss v ds = - 10 v, v gs =0v f=1 mhz 8 0 0 9 6 0 pf output capacitance c oss 1 3 1 reverse transfer capacitance c rss 1 0 3 note: 1 . the value of r ja is measured with the device mounted on 1in2 fr - 4 b oard with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. 2 . repetitive rating, pulse width limited by junction temperature. 3 . the current rating is based on the t 10s junction to ambient thermal resistance rating.
ace 23 4 1 b p - channel enhancement mode field effect transistor ver 1. 2 3 typical performance characteristics
ace 23 4 1 b p - channel enhancement mode field effect transistor ver 1. 2 4 typical performance characteristics
ace 23 4 1 b p - channel enhancement mode field effect transistor ver 1. 2 5 packing information sot - 23 - 3 l unit: mm
ace 23 4 1 b p - channel enhancement mode field effect transistor ver 1. 2 6 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approva l of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perf orm when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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